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Crucial Laptop RAM DDR4 32GB 2666
KSh24,000.00 Original price was: KSh24,000.00.KSh15,500.00Current price is: KSh15,500.00. + VAT

Samsung 8GB DDR3L 1600 Desktop RAM
KSh6,500.00 Original price was: KSh6,500.00.KSh6,000.00Current price is: KSh6,000.00. + VAT
Transcend 8GB 3200 DDR4 Desktop RAM
KSh6,500.00 Original price was: KSh6,500.00.KSh6,000.00Current price is: KSh6,000.00. + VAT
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Categories: RAM, Transcend RAM
Tag: Transcend 8GB 3200 DDR4 Desktop RAM
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- For Desktop PCs, Speed: PC3-12800, Module Specification: 240 Pin UDIMM. CAS Latency: CL11, Working Voltage: 1.35V
- High speed up to 1600MHz, Transfer bandwidth up to 12.8GB/s. 6-layer PCB provides improved signal transfer and system stability
- Energy efficient: save up to 10% compared to DDR3. Operating Temperature: 0°C-85°C
- Supports Intel Skylake and Coffee Lake platforms, future-proof for Kaby Lake & Cannon Lake platforms. Complies with JEDEC standards and RoHS compliant
- ADATA standard U-DIMM, Very Low-Profile modules (VLP), or small outline modules (U-DIMM), all implement cutting edge technology that enables remarkable memory quality, stability, and reliability.
Transcend 32GB JM DDR4 2666Mhz SO-DIMM 2Rx8 2Gx8 CL19 1.2V
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- Internal memory 32 GB
- Memory layout (modules x size) 1 x 32 GB
- Internal memory type DDR4
- Memory clock speed 2666 MHz
- Component for Notebook
- Memory form factor 260-pin SO-DIMM
- CAS latency 19
- Memory ranking 2
- Memory voltage 1.2 V
- Module configuration 2048M x 8
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Transcend 32Gb JM DDR4 2666Mhz U-DIMM 2Rx8 2Gx8 Cl19
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- Internal memory 32 GB
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- Transcend offers a comprehensive range of DDR4 standard long-DIMMs and compact SO-DIMMs to enhance memory bandwidth for desktops and laptops alike. All modules are tested across various motherboard platforms and operating systems with achieving maximum compatibility in mind.
- DDR4 delivers far less response time and application loading time than its predecessors DDR3, DDR2, and DDR. It is higher in RAM density but lower in power consumption, having brought energy requirement further down to 1. 2V, making it best suited for memory-intensive applications.
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